| PART |
Description |
Maker |
| PALCE16V8 CE16V8 |
Flash Erasable,Reprogrammable CMOS PAL Device
From old datasheet system
|
Cypress
|
| PALC22V10D |
FLASG ERASABLE REPROGRAMMABLE CMOS PAL DEVICE
|
CYPRESS[Cypress Semiconductor]
|
| M5M27C202JK-10 M5M27C202JK-12 M5M27C202JK-15 M5M27 |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| PY291A PY291A-25DMB PY291A-25WMB PY291A-25WC PY291 |
2K X 8 REPROGRAMMABLE PROM 2K X 8 OTPROM, 25 ns, PDIP24
2K X 8 REPROGRAMMABLE PROM 2K × 8可重复编程胎膜早
2K X 8 REPROGRAMMABLE PROM 2K X 8 OTPROM, 35 ns, PDIP24
2K X 8 REPROGRAMMABLE PROM 2K X 8 UVPROM, 35 ns, CDIP24
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| 29C010PI-1 29C010PI-2 29C010PI-3 29C010JC-1 29C010 |
High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed 150 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed 200 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns.
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns.
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns.
|
Turbo IC
|
| ATF22V10CQZ ATF22V10CZ-15JJ ATF22V10CQZ-20JJ ATF22 |
High-performance Electrically Erasable Programmable Logic Device
FLASH PLD, 15 ns, PQCC28 PLASTIC, LCC-28
FLASH PLD, 20 ns, PQCC28 PLASTIC, LCC-28
20NS, PLCC, IND TEMP, GREEN(EPLD) FLASH PLD, 20 ns, PQCC28
|
Atmel, Corp.
ATMEL Corporation
|
| EP610IPC-10 EP610SC10 EP610SC-25 EP610SC-15T EP610 |
ASIC
UV-Erasable/OTP PLD UV-Erasable/OTP可编程逻辑器件
4kbit EEPROM; Triple Voltage Monitor with Integrated CPU Supervisor; Temperature Range: 0°C to 70°C; Package: 14-TSSOP UV-Erasable/OTP可编程逻辑器件
|
Rochester Electronics, LLC
|
| M25PE10 M25PE20 M25PE10-VMP6TG M25PE10-VMP6TP M25P |
4 Mbit Uniform Sector, Serial Flash Memory
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out
1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| P89LPC933 P89LPC934 P89LPC935FA P89LPC935FDH P89LP |
8-bit microcontroller with accelerated two-clock 80C51 core 4 kB/8 kB/16 kB 3 V byte-erasable Flash with 8-bit ADCs
8-bit microcontroller with accelerated two-clock 80C51 core 4 kB/8 kB 3 V byte-erasable Flash with 8-bit A/D converters
|
Philips
NXP Semiconductors
|
| PY264 PY264-45PM PY264-45PMB PY264-55PMB PY264-35P |
8K X 8 REPROGRAMMABLE PROM 8K的8可重复编程胎膜早
8K X 8 REPROGRAMMABLE PROM 8K X 8 UVPROM, 45 ns, CDIP24
8K X 8 REPROGRAMMABLE PROM 8K X 8 UVPROM, 55 ns, CDIP24
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| MB98A809B |
Flash Erasable and Programmable Memory Card(4M电可擦可编程闪存) 闪光可擦除和可编程记忆卡（分电可擦可编程闪存
|
Fujitsu, Ltd.
|
| P89LPC9402 P89LPC9402FBD |
8-bit microcontroller with accelerated two-clock 80C51 core 8 kB 3 V byte-erasable flash with 32 segment 4 LCD driver
|
NXP Semiconductors
|
